zero-带隙,Zero-gap英语短句,例句大全

zero-带隙,Zero-gap
1)Zero-gapzero-带隙
2)band gap带隙
1.Effect of translation group symmetry on phononic band gaps studied by supercell calculation;超元胞方法研究平移群对称性对声子带隙的影响
2.Influence of scatterers′ tropism on the band gaps of two-dimension phononic crystal;散射体的取向对二维声子晶体带隙的影响(英文)
3.Elastic wave band gap and scattering in phononic crystal;声子晶体中弹性波带隙与散射

英文短句/例句

1.Study on the Properties of Band Gaps of Surface Wave in Magnetoelectroelastic Acoustic Band-Gap Materials磁电弹性声带隙材料表面波带隙特性研究
2.Research on bandgap characteristics of all solid square-lattice photonic bandgap fiber四方格子全固光子带隙光纤带隙特性研究
3.Research & Design of One-Dimensional Microstrip PBG Struture;一维微带光子带隙结构的研究与设计
4.A Novel Compact Wide Stopband Electromagnetic Bandgap Structure一种新颖的小型宽阻带电磁带隙结构
5.A Novel Compact Wideband Planar Electromagnetic Band-Gap Structure一种新型紧凑宽带平面电磁带隙结构
6.A High-Precision Bandgap Reference with 2~(nd)-Order Compensation一种带2阶补偿的高精度带隙基准源
7.Influence of dielectric substrates on surface wave bandgap of uniplanar electromagnetic band-gap structure支撑介质对平面型电磁带隙结构带隙特性的影响
8.The Calculation of photonic Crystal Band Gap Using the FDTD Method;光子晶体带隙时域有限差分方法计算
9.Design of a High Precision BiCOMS Bandgap Voltage Reference;一种高精度BiCMOS带隙电压基准源的设计
10.The Investigation of the Properties of PBG-PCF;光子带隙型光子晶体光纤的特性研究
11.Research on CMOS Bandgap Temperature Sensor;CMOS带隙温度传感器电路的研究
12.On Characters of Bandgap Parameter Scanner of Two-dimensional Photonic Crystal;二维光子晶体带隙参数扫描特性研究
13.Study on photonic band gap structure using nonorthogonal FDTD method;用非正交FDTD方法研究光子带隙结构
14.Finite Element Method to Calculate the Band Gap of Two-dimensional Periodic Structures二维周期性结构带隙计算的有限元法
15.Several Novel Low Voltage Low Power CMOS Bandgap Reference Voltage Source低压低功耗CMOS带隙基准电压源设计
16.A high-performance CMOS Bandgap Voltage Reference Design一种高性能CMOS带隙基准电压源设计
17.A Novel Design Approach For Dual-Bandgap Using Defected Ground Structure一种用DGS结构实现双带隙的设计
18.nine channel dual-gap read-after-write digital type head assembly九道双隙写后读数磁带头

相关短句/例句

band gap带隙
1.Effect of translation group symmetry on phononic band gaps studied by supercell calculation;超元胞方法研究平移群对称性对声子带隙的影响
2.Influence of scatterers′ tropism on the band gaps of two-dimension phononic crystal;散射体的取向对二维声子晶体带隙的影响(英文)
3.Elastic wave band gap and scattering in phononic crystal;声子晶体中弹性波带隙与散射
3)bandgap['b?ndɡ?p]带隙
1.Precise Bandgap Voltage Reference and Current Reference;一种高精度的带隙基准电压源及电流源
2.Design of low temperature drift bandgap voltage reference and driving circuit;低温漂带隙基准源及驱动电路设计
3.A method to estimate the strain state of SiGe/Si by measuring the bandgap;带隙法测定SiGe/Si材料的应变状态
4)Band-gap带隙
1.It is concluded that compared with simple lattices, the band-gap of complex lattices.结果表明,与简单格子相比,复式格子的带隙出现在频率相对较低的位置;在f=0·091—0·6046范围内,将声子晶体排列为复式格子要优于简单格子,可以得到更宽带隙。
2.First principles and pseudopotential approaches have been used to investigate band structures and pressure dependence of the band-gaps of ordered zincblende Ge_(50)Sn_(50)alloy up to 9 GPa.使用第一性原理和赝势方法研究了Ge_(50)Sn_(50)有序合金直到9 GPa压力下的能带结构和带隙的压力依赖性。
3.In this paper, on basis of the analysis of the foregoing band-gap voltage reference ,a self-start low-voltage low-power band-gap voltage reference is proposed in which TSMC 0.35μm CMOS工艺,基于对传统带隙基准电路的分析,利用MOS管的亚阈特性,设计了一种低压低功耗的带自举的带隙基准电压源。
5)fracture zone隙带
1.Research and application of the technique of stopping the drainage hole quickly by chemical method in the structure fracture zone;应用化学法在构造裂隙带快速封堵抽放钻孔技术的研究与应用
6)energy gap带隙
1.Optical parameters of GaInP were measured by using null ellipsometric spectrum method in the visible light region at room temperature The dependencies of refractive index and absorption coefficient for three samples on the energy of photons were obtained, and the result was analyzed and discussed The positions of energy gap of three samples were give利用消光式椭圆偏振光谱法 ,在室温下可见光区对光电子材料镓铟磷的光学参数进行了测量 ,得到该材料的折射率和吸收系数随光子能量的变化关系曲线 ,并对结果进行了分析和讨论 ,给出了镓铟磷带隙的位
2.The energy gap Eg and the value of energy Eg+Δ 0 were obtained.对其结果进行了讨论，给出了带隙Ｅｇ和跃迁Ｅｇ＋Δ０的能量值，Δ０的实验值与计算值符合的很好。
3.The energy gap is 0.1eV的价带;导带部分主要是由Zn的4s态贡献的,O的2p态在该区域内具有微弱的贡献;ZnO是一种直接宽禁带半导体,导带底和价带顶位于布里渊区中心处,带隙为0。